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NP84N075EUE, NP84N075KUE, NP84N075CUE, NP84N075DUE, NP84N075MUE, NP84N075NUE
ELECTRICAL CHARACTERISTICS (T A = 25 ° C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate to Source Threshold Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
SYMBOL
I DSS
I GSS
V GS(th)
| y fs |
R DS(on)
C iss
C oss
C rss
t d(on)
t r
t d(off)
t f
Q G
Q GS
Q GD
V F(S-D)
t rr
Q rr
TEST CONDITIONS
V DS = 75 V, V GS = 0 V
V GS = ± 20 V, V DS = 0 V
V DS = V GS , I D = 250 μ A
V DS = 10 V, I D = 42 A
V GS = 10 V, I D = 42 A
V DS = 25 V,
V GS = 0 V,
f = 1 MHz
V DD = 38 V, I D = 42 A,
V GS = 10 V,
R G = 0 Ω
V DD = 60 V,
V GS = 10 V,
I D = 84 A
I F = 84 A, V GS = 0 V
I F = 84 A, V GS = 0 V,
di/dt = 100 A/ μ s
MIN.
2.0
21
TYP.
3.0
43
9.3
5600
530
270
30
21
72
12
100
24
35
1.0
70
200
MAX.
10
± 100
4.0
12.5
8400
800
490
66
53
150
30
150
UNIT
μ A
nA
V
S
m Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
TEST CIRCUIT 2 SWITCHING TIME
PG.
V GS = 20 V → 0 V
R G = 25 Ω
50 Ω
L
V DD
PG.
R G
D.U.T.
R L
V DD
V GS
Wave Form
V GS
10%
0
V GS
90%
I D
I AS
BV DSS
V DS
V GS
0
I D
Wave Form
I D
0 10%
90%
I D
90%
10%
V DD
Starting T ch
τ
τ = 1 μ s
Duty Cycle ≤ 1%
t d(on)
t on
t r t d(off)
t off
t f
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
I G = 2 mA
R L
PG.
50 Ω
V DD
Data Sheet D14675EJ4V0DS
3
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